X-ray reflectivity investigations of the interface morphology in strained SiGe/Si multilayersHOLY, V; DARHUBER, A. A; STANGL, J et al.Semiconductor science and technology. 1998, Vol 13, Num 6, pp 590-598, issn 0268-1242Article

Luminescence studies of confined excitons in pseudomorphic Si/SiGe quantum wells grown by solid source molecular beam epitaxyBRUNNER, J; NÜTZEL, J; GAIL, M et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1993, Vol 11, Num 3, pp 1097-1100, issn 1071-1023Conference Paper

Object nets for the design and verification of distributed and embedded applicationsNÜTZEL, J; DÄNE, B; FENGLER, W et al.Lecture notes in computer science. 1998, pp 953-962, issn 0302-9743, isbn 3-540-64359-1Conference Paper

Phosphorous doping in low temperature silicon molecular beam epitaxyFRIESS, E; NÜTZEL, J; ABSTREITER, G et al.Applied physics letters. 1992, Vol 60, Num 18, pp 2237-2239, issn 0003-6951Article

Modelling and distributed simulation of production of single piece and small-lot series using Fuzzy Coloured Petri NetsBEN ACHOUR, K; FENGLER, W; DANE, B et al.Information processing and management of uncertainty in knowledge-based systems. International conferenceTraitement d'information et gestion d'incertitudes dans les systèmes à base de connaissances. Conférence internationale. 1998, pp 1602-1610, isbn 2-84254-013-1, 2VolConference Paper

Optical study of diffusion limitation in MBE growth of SiGe quantum wellsGAIL, M; BRUNNER, J; NÜTZEL, J et al.Semiconductor science and technology. 1995, Vol 10, Num 3, pp 319-325, issn 0268-1242Article

Intersubband absorption in modulation-doped p-type Si/Si_1-xGe_x quantum wells : a systematic study : Silicon molecular beam epitaxyFROMHERZ, T; KOPPENSTEINER, E; HELM, M et al.Japanese journal of applied physics. 1994, Vol 33, Num 4B, pp 2361-2364, issn 0021-4922, 1Conference Paper

Investigation of strain relaxation of Ge_1-xSi_x epilayers on Ge(001) by high-resolution x-ray reciprocal space mappingLI, J. H; HOLY, V; BAUER, G et al.Semiconductor science and technology. 1995, Vol 10, Num 12, pp 1621-1628, issn 0268-1242Article

Intersubband absorption in modulation doped p-type Si_1-xGe_x quantum wells: theory and experimentFROMHERZ, T; KOPPENSTEINER, E; HELM, M et al.Superlattices and microstructures. 1994, Vol 15, Num 3, pp 229-232, issn 0749-6036Article

Polarization dependence of intersubband absorption and photoconductivity in p-type SiGe quantum wellsFROMHERZ, T; KRUCK, P; HELM, M et al.Superlattices and microstructures. 1996, Vol 20, Num 2, pp 237-243, issn 0749-6036Article

RHEED investigations of surface diffusion on Si(001)NÜTZEL, J. F; BRICHZIN, P; ABSTREITER, G et al.Applied surface science. 1996, Vol 102, pp 78-81, issn 0169-4332Conference Paper

Segregation of n-dopants on SiGe surfacesNÜTZEL, J. F; HOLZMANN, M; SCHITTENHELM, P et al.Applied surface science. 1996, Vol 102, pp 98-101, issn 0169-4332Conference Paper

Polarization-dependent intersubband absorption and normal-incidence infrared detection in p-type Si/SiGe quantum wellsKRUCK, P; WEICHSELBAUM, A; HELM, M et al.Superlattices and microstructures. 1998, Vol 23, Num 1, pp 61-66, issn 0749-6036Article

Boron-doped Si/Ge superlattices and heterostructuresNÜTZEL, J. F; MEIER, F; FRIESS, E et al.Thin solid films. 1992, Vol 222, Num 1-2, pp 150-153, issn 0040-6090Conference Paper

Room temperature electroluminescence of Er-implanted silicon diodes grown by MBEJAUMANN, M; STIMMER, J; SCHITTENHELM, P et al.Applied surface science. 1996, Vol 102, pp 327-330, issn 0169-4332Conference Paper

Growth and properties of high-mobility two-dimensional hole gases in Ge on relaxed Si/SiGe, Ge/SiGe buffers and Ge substratesNÜTZEL, J. F; ENGELHARDT, C. M; WEISNER, R et al.Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 1011-1014, issn 0022-0248, 2Conference Paper